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R75MW468050H2J - R75MF215050H0J

R75MW468050H2J

Active
KEMET

POWER FILM CAPACITOR, METALLIZED PP, RADIAL BOX - 2 PIN, 6.8 ΜF, ± 5%, HIGH FREQUENCY

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R75MW468050H2J - R75MF215050H0J

R75MW468050H2J

Active
KEMET

POWER FILM CAPACITOR, METALLIZED PP, RADIAL BOX - 2 PIN, 6.8 ΜF, ± 5%, HIGH FREQUENCY

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Technical Specifications

Parameters and characteristics for this part

SpecificationR75MW468050H2J
ApplicationsAutomotive, High Frequency, Switching, High Pulse, DV/DT
Capacitance6.8 ÁF
Dielectric MaterialMetallized, Polypropylene (PP)
ESR (Equivalent Series Resistance)7 mOhms
Height - Seated (Max) [Max]40.1 mm
Height - Seated (Max) [Max] [z]1.579 in
Lead Spacing37.5 mm
Lead Spacing1.476 in
Mounting TypeThrough Hole
Operating Temperature [Max]125 °C
Operating Temperature [Min]-55 °C
Package / CaseRadial
RatingsAEC-Q200
Size / Dimension [x]1.634 "
Size / Dimension [x]41.5 mm
Size / Dimension [y]20 mm
Size / Dimension [y]0.787 in
TerminationPC Pins
Tolerance5 %
Voltage Rating - AC220 V
Voltage Rating - DC400 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 1$ 7.98
10$ 5.52
40$ 4.64
80$ 4.31
440$ 3.72
945$ 3.54
2400$ 3.35
NewarkEach 100$ 4.70
500$ 4.28
1000$ 3.78
2500$ 3.51

Description

General part information

R75MW Series

R75H series are single metallized polypropylene film radial capacitors for DC and pulse applications. Capacitors are constructed of metallized polypropylene film with radial leads of tinned wire. The radial leads are electrically welded to the metal layer on the ends of the capacitor winding. The capacitor is encapsulated in a self-extinguishing solvent resistant plastic case with thermosetting resin material meeting UL 94 V–0 requirements. Two different winding constructions are used depending on voltage parameters and lead spacing. Typical applications include resonant circuit, high frequency medium to height current, silicon-controlled rectifier (SCR and IGBT) and SiC (MOSFET) commutation circuits as well as applications with high voltage and medium to high current in combination with high temperature and DC link.