PMN30ENEAX

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Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 40V 5.4A 6-PIN TSOP T/R

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PMN30ENEAX

Active

Nexperia USA Inc.

TRANSISTOR MOSFET N-CH 40V 5.4A 6-PIN TSOP T/R

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Description Specifications Series Pricing CAD Documents

Description

General part information

PMN30ENEA Series

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

Specification	PMN30ENEAX

Current - Continuous Drain (Id) (Ta)	5.4 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	11.7 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	440 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-74, SOT-457
Package Name	6-TSOP
Power Dissipation (Max)	7.5 W, 667 mW
Qualification	AEC-Q101
Rds On (Max)	30 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

PMN30ENEA Series

40 V N-channel Trench MOSFET

Part	Gate Charge (Max)	Vgs(th) (Max)	Grade	Package / Case	FET Type	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package Name	Vgs (Max)	Current - Continuous Drain (Id) (Ta)	Technology	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Rds On (Max)	Qualification	Operating Temperature (Min)	Operating Temperature (Max)
Nexperia USA Inc. PMN30ENEAX	11.7 nC	2.5 V	Automotive	SC-74 SOT-457	N-Channel	Surface Mount	40 V	10 V	4.5 V	6-TSOP	20 V	5.4 A	MOSFET (Metal Oxide)	440 pF	7.5 W 667 mW	30 mOhm	AEC-Q101	-55 °C	175 °C