BY253G

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Taiwan Semiconductor Corporation

DIODE STANDARD 600V 3A DO201AD

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Taiwan Semiconductor Corporation

DIODE STANDARD 600V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	BY253G

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Package / Case	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Mounting Type	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Technology	Capacitance @ Vr, F	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Taiwan Semiconductor Corporation BY253G	DO-201AD Axial	DO-201AD	5 µA	3 A	Through Hole	200 mA 500 ns	600 V	1 V	Standard	40 pF	150 °C	-55 °C

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General part information

Diode 600 V 3A Through Hole DO-201AD

Technical documentation and resources