Specification	IRF60B217

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	66 nC, 66 nC
Input Capacitance (Ciss) (Max)	2230 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	PG-TO220-3-1
Power Dissipation (Max)	83 W
Rds On (Max)	9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.7 V

IRF60B217 Series

Part	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Package Name	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Technology	FET Type	Package / Case	Gate Charge (Max)	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)
INFINEON IRF60B217	3.7 V	2230 pF	83 W	Through Hole	6 V	10 V	PG-TO220-3-1	60 V	60 A	MOSFET (Metal Oxide)	N-Channel	TO-220-3	66 nC 66 nC	20 V	-55 °C	175 °C	9 mOhm
INFINEON IRF60B217	3.7 V	2230 pF	83 W	Through Hole	6 V	10 V	TO-220AB	60 V	60 A	MOSFET (Metal Oxide)	N-Channel	TO-220-3	66 nC 66 nC	20 V	-55 °C	175 °C	9 mOhm

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