TK3R2E06PL,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0032 Ω@10V, TO-220, U-MOSⅨ-H
TK3R2E06PL,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 60 V, 0.0032 Ω@10V, TO-220, U-MOSⅨ-H
Description
General part information
TK3R2E06PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0032 Ω@10V, TO-220, U-MOSⅨ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK3R2E06PL,S1X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 71 nC |
| Input Capacitance (Ciss) (Max) | 5000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 175 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 168 W |
| Rds On (Max) | 3.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.5 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Simplified CFD Model Application Note
MOSFET Secondary Breakdown
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Calculating the Temperature of Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Selection Guide MOSFETs 2025 Rev1.0
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Derating of the MOSFET Safe Operating Area
Electrical Characteristics: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Avalanche energy calculation
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
TK3R2E06PL Data sheet/English
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Maximum Ratings: Power MOSFET Application Notes
MOSFET Self-Turn-On Phenomenon
RC Snubbers for Step-Down Converters
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
TK3R2E06PL Data sheet/Japanese
MOSFET SPICE model grade
Resonant Circuits and Soft Switching