Specification	SISH617DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	13.9 A
Current - Continuous Drain (Id) (Tc)	35 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	59 nC
Input Capacitance (Ciss) (Max)	1800 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8SH
Package Name	PowerPAK® 1212-8SH
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	12.3 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

SISH617 Series

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Mounting Type	Gate Charge (Max)	Vgs (Max)	Technology	Drain to Source Voltage (Vdss)	Package Name	Power Dissipation (Max)	FET Type
Vishay Dale SISH617DN-T1-GE3	12.3 mOhm	1800 pF	PowerPAK® 1212-8SH	10 V	4.5 V	-55 °C	150 °C	2.5 V	13.9 A	35 A	Surface Mount	59 nC	25 V	MOSFET (Metal Oxide)	30 V	PowerPAK® 1212-8SH	3.7 W 52 W	P-Channel

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