Description
General part information
IPB60R125 Series
This600V CoolMOS™ CFD7Superjunction MOSFET IPB60R125CFD7 in D2PAK package is Infineon's solution targeting resonant topologies in high powerSMPS, such asserver,telecomandEV chargingstations. It features remarkable efficiency improvements as well as lowest FOM RDS(on)x Qgand EOSS. Following theCFD2 SJ MOSFETfamily theCFD7comes with reduced gate charge, improved turn-off behavior and up to 69% reduced reverse recovery charge compared to competitors.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB60R125CFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 18 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 36 nC, 36 nC |
| Input Capacitance (Ciss) (Max) | 1503 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | PG-TO263-3-2 |
| Power Dissipation (Max) | 92 W |
| Rds On (Max) | 125 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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