Specification	SIRC10DP-T1-GE3

Current - Continuous Drain (Id) (Tc)	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Feature	Schottky Diode (Body)
FET Type	N-Channel
Gate Charge (Max)	36 nC, 36 nC
Input Capacitance (Ciss) (Max)	1873 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	43 W
Rds On (Max)	3.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SIRC10 Series

Part	FET Feature	Gate Charge (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Technology	Rds On (Max)	Package Name	Vgs (Max) Negative	Vgs (Max) Positive	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Mounting Type	Vgs(th) (Max)	FET Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)
Vishay Dale SIRC10DP-T1-GE3	Schottky Diode (Body)	36 nC 36 nC	-55 °C	150 °C	PowerPAK® SO-8	1873 pF	MOSFET (Metal Oxide)	3.5 mOhm	PowerPAK® SO-8	-16 V	20 V	60 A	30 V	Surface Mount	2.4 V	N-Channel	10 V	4.5 V	43 W

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