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PN5135 TIN/LEAD

PN5135 TIN/LEAD

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Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 4.0VEBO 100MA 25PF

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PN5135 TIN/LEAD

PN5135 TIN/LEAD

Active
Central Semiconductor Corp

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 4.0VEBO 100MA 25PF

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Description

General part information

PN5135 Series

BIPOLAR TRANSISTORS - BJT NPN 30VCBO 25VCEO 4.0VEBO 100MA 25PF

Technical Specifications

Parameters and characteristics for this part

SpecificationPN5135 TIN/LEAD
Current - Collector (Ic) (Max)0.2 mA
Current - Collector Cutoff (Max)300 nA
DC Current Gain (hFE) (Min)50
Frequency - Transition40 MHz
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Package NameTO-92-3
Power - Max625 mW
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)25 V

Pricing

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CAD

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Documents

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