TK7Q60W,S1VQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.6 Ω@10V, IPAK, DTMOSⅣ
TK7Q60W,S1VQ
ActiveToshiba Semiconductor and Storage
HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.6 Ω@10V, IPAK, DTMOSⅣ
Description
General part information
TK7Q60W Series
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.6 Ω@10V, IPAK, DTMOSⅣ
Technical Specifications
Parameters and characteristics for this part
| Specification | TK7Q60W,S1VQ |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 7 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 15 nC |
| Input Capacitance (Ciss) (Max) | 490 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Package Name | IPAK |
| Power Dissipation (Max) | 60 W |
| Rds On (Max) | 600 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) | 3.7 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK7Q60W,S1VQ | Datasheet
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TK7Q60W Data sheet/Japanese
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
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Avalanche energy calculation
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Electrical Characteristics: Power MOSFET Application Notes