Specification	SI5504BDC-T1-E3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	3.7 A
Current - Continuous Drain (Id) (Typical)	4 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	7 nC
Input Capacitance (Ciss) (Max)	220 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	Flat Leads, 8-SMD
Package Name	1206-8 ChipFET™
Power - Max (Value 1)	3.12 W
Power - Max (Value 2)	3.1 W
Rds On (Max)	65 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	3 V

SI5504 Series

Part	Package Name	Rds On (Max)	Technology	Package / Case	Gate Charge (Max)	Power - Max	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Mounting Type	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Input Capacitance (Ciss) (Max)	Power - Max (Value 1)	Power - Max (Value 2)
Vishay Dale SI5504DC-T1-GE3	1206-8 ChipFET™	85 mOhm	MOSFET (Metal Oxide)	8-SMD Flat Leads	7.5 nC	1.1 W	1 V	-55 °C	150 °C	Surface Mount	N P-Channel	Logic Level Gate	30 V	2.9 A	2.1 A
Vishay Dale SI5504BDC-T1-E3	1206-8 ChipFET™	65 mOhm	MOSFET (Metal Oxide)	8-SMD Flat Leads	7 nC		3 V	-55 °C	150 °C	Surface Mount	N P-Channel	Logic Level Gate	30 V	4 A	3.7 A	220 pF	3.12 W	3.1 W

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