BUK7Y3R1-80MX
ActiveN-CHANNEL 80 V, 3.1 MOHM, STANDARD LEVEL MOSFET IN LFPAK56
BUK7Y3R1-80MX
ActiveN-CHANNEL 80 V, 3.1 MOHM, STANDARD LEVEL MOSFET IN LFPAK56
Description
General part information
BUK7Y3R1-80M Series
Automotive qualified N-channel MOSFET using the latest Trench 14 low ohmic split-gate technology, for ultra-low RDSoncapability, housed in a LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK7Y3R1-80MX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 160 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 108 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 6986 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 300 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 3.1 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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