Specification	PSMN1R3-80SSFJ

Current - Continuous Drain (Id) (Tc)	335 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	246 nC
Input Capacitance (Ciss) (Max)	16647 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-1235
Package Name	LFPAK88 (SOT1235)
Power Dissipation (Max)	341 W
Rds On (Max)	1.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

PSMN1R3-80SSF Series

NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package

Part	Package Name	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Input Capacitance (Ciss) (Max)	FET Type	Package / Case	Vgs(th) (Max)	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
Nexperia USA Inc. PSMN1R3-80SSFJ	LFPAK88 (SOT1235)	246 nC	80 V	MOSFET (Metal Oxide)	Surface Mount	-55 °C	175 °C	1.2 mOhm	335 A	16647 pF	N-Channel	SOT-1235	4 V	20 V	341 W	10 V

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