Specification	IXDD514SIA

Channel Type	Single
Current - Peak Output (Sink)	14 A
Current - Peak Output (Source)	14 A
Driven Configuration	Low-Side
Fall Time (Typ)	22 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	1 V
Mounting Type	Surface Mount
Number of Drivers	1
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Rise Time (Typ)	25 ns
Voltage - Supply (Maximum)	30 VDC
Voltage - Supply (Minimum)	4.5 V

IXDD514 Series

Part	Gate Type	Package Name	Mounting Type	Logic Voltage - VIH	Logic Voltage - VIL	Package Length	Package Width	Current - Peak Output (Source)	Current - Peak Output (Sink)	Driven Configuration	Input Type	Fall Time (Typ)	Rise Time (Typ)	Channel Type	Operating Temperature (Min)	Operating Temperature (Max)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Gate Channel	Number of Drivers	Package / Case
LITTELFUSE IXDD514PI	IGBT MOSFET N-Channel P-Channel MOSFET	8-DIP	Through Hole	2.5 V	1 V	0.3 in	7.62 mm	14 A	14 A	Low-Side	Non-Inverting	22 ns	25 ns	Single	-55 °C	150 °C	4.5 V	30 VDC	N-Channel P-Channel	1
LITTELFUSE IXDD514SIA	IGBT MOSFET N-Channel P-Channel MOSFET	8-SOIC	Surface Mount	2.5 V	1 V	0.154 in	3.9 mm	14 A	14 A	Low-Side	Non-Inverting	22 ns	25 ns	Single	-55 °C	150 °C	4.5 V	30 VDC	N-Channel P-Channel	1
LITTELFUSE IXDD514D1	IGBT MOSFET N-Channel P-Channel MOSFET	6-DFN	Surface Mount	2.5 V	1 V	4 mm	5 mm	14 A	14 A	Low-Side	Non-Inverting	22 ns	25 ns	Single	-55 °C	150 °C	4.5 V	30 VDC	N-Channel P-Channel	1	6-VDFN Exposed Pad
LITTELFUSE IXDD514SIAT/R	IGBT MOSFET N-Channel P-Channel MOSFET	8-SOIC	Surface Mount	2.5 V	1 V	0.154 in	3.9 mm	14 A	14 A	Low-Side	Non-Inverting	22 ns	25 ns	Single	-55 °C	150 °C	4.5 V	30 VDC	N-Channel P-Channel	1

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