Specification	SIS888DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	20.2 A, 20.2 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	14.5 nC
Input Capacitance (Ciss) (Max)	420 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8S
Package Name	PowerPAK® 1212-8S
Power Dissipation (Max)	52 W
Rds On (Max)	58 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.2 V

SIS Series

Part	Mounting Type	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Package / Case	Gate Charge (Max)	Technology	Channel Count	Configuration	Configuration - Features	Power - Max	Power - Max (Ta)	Power - Max (Tc)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Power Dissipation (Max)	FET Type	Vgs (Max)	FET Feature
Vishay Dale SIS990DN-T1-GE3	Surface Mount	100 V	85 mOhm	4 V	12.1 A	PowerPAK® 1212-8 Dual	-55 °C	150 °C	250 pF	PowerPAK® 1212-8 Dual	8 nC	MOSFET (Metal Oxide)	2	N-Channel	Dual	25 W
Vishay Dale SIS9446DN-T1-GE3	Surface Mount	40 V	12 mOhm	2.3 V		PowerPAK® 1212-8	-55 °C	150 °C	720 pF	PowerPAK® 1212-8	16 nC	MOSFET (Metal Oxide)	2	N-Channel	Dual		2.6 W	23 W	11.3 A	34 A
Vishay Dale SIS472ADN-T1-GE3	Surface Mount	30 V	8.5 mOhm	2.4 V		PowerPAK® 1212-8	-55 °C	150 °C	1515 pF	PowerPAK® 1212-8	44 nC 44 nC	MOSFET (Metal Oxide)								24 A	10 V	4.5 V	28 W	N-Channel	20 V
Vishay Dale SIS888DN-T1-GE3	Surface Mount	150 V	58 mOhm	4.2 V		PowerPAK® 1212-8S	-55 °C	150 °C	420 pF	PowerPAK® 1212-8S	14.5 nC	MOSFET (Metal Oxide)								20.2 A 20.2 A	10 V	7.5 V	52 W	N-Channel	20 V
Vishay Dale SIS184LDN-T1-GE3	Surface Mount	60 V	5.4 mOhm	3 V		PowerPAK® 1212-8	-55 °C	150 °C	1950 pF	PowerPAK® 1212-8	41 nC	MOSFET (Metal Oxide)							18.7 A	69.4 A	10 V	4.5 V	3.7 W 52 W	N-Channel	20 V
Vishay Dale SIS112LDN-T1-GE3	Surface Mount	100 V	119 mOhm	2.5 V		PowerPAK® 1212-8	-55 °C	150 °C	355 pF	PowerPAK® 1212-8	11.8 nC 11.8 nC	MOSFET (Metal Oxide)							3.5 A	8.8 A	10 V	4.5 V	3.2 W 19.8 W	N-Channel	20 V
Vishay Dale SIS427EDN-T1-GE3	Surface Mount	30 V	10.6 mOhm	2.5 V		PowerPAK® 1212-8	-55 °C	150 °C	1930 pF	PowerPAK® 1212-8	66 nC 66 nC	MOSFET (Metal Oxide)								50 A	10 V	4.5 V	3.7 W 52 W	P-Channel	25 V
Vishay Dale SIS780DN-T1-GE3	Surface Mount	30 V	13.5 mOhm	2.3 V		PowerPAK® 1212-8	-55 °C	150 °C	722 pF	PowerPAK® 1212-8	24.5 nC	MOSFET (Metal Oxide)								18 A	10 V	4.5 V	27.7 W	N-Channel	20 V	Schottky Diode (Body)

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Product Change Notice EN

Technical Data Sheet EN

SIS888DN-T1-GE3 | Datasheet