Specification	FF6MR12W2M1PB11BPSA1

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tj)	200 A
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Max)	496 nC, 496 nC
Input Capacitance (Ciss) (Max)	14700 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Rds On (Max)	5.63 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	5.55 V

FF6MR12 Series

Part	Rds On (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Technology	Channel Count	Configuration - Features	Configuration	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Package Name	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tj)
INFINEON FF6MR12KM1PHOSA1	5.81 mOhm	Chassis Mount	14700 pF	Silicon Carbide (SiC)	2	Half Bridge	N-Channel	Module	-40 °C	150 °C	5.15 V	AG-62MM	250 A	496 nC 496 nC	1200 V
INFINEON FF6MR12W2M1PB11BPSA1	5.63 mOhm	Chassis Mount	14700 pF	Silicon Carbide (SiC)	2	Dual	N-Channel	Module	-40 °C	150 °C	5.55 V			496 nC 496 nC	1200 V	200 A
INFINEON FF6MR12KM1BOSA1	5.81 mOhm	Chassis Mount	14700 pF	Silicon Carbide (SiC)	2	Half Bridge	N-Channel	Module	-40 °C	150 °C	5.15 V	AG-62MM	250 A	496 nC 496 nC	1200 V
INFINEON FF6MR12W2M1B11BOMA1	5.63 mOhm	Chassis Mount	14700 pF	Silicon Carbide (SiC)	2	Dual	N-Channel	Module	-40 °C	150 °C	5.55 V	AG-EASY2BM-2		496 nC 496 nC	1200 V	200 A
INFINEON FF6MR12W2M1B70BPSA1	5.63 mOhm	Chassis Mount	14700 pF	Silicon Carbide (SiC)	2	Half Bridge	N-Channel	Module	-40 °C	150 °C	5.55 V	AG-EASY2B		496 nC 496 nC	1200 V	200 A
INFINEON FF6MR12W2M1HB11BPSA1	5.4 mOhm	Chassis Mount	13200 pF	Silicon Carbide (SiC)	2	Half Bridge	N-Channel	Module	-40 °C	175 °C	5.15 V	Module		446 nC	1200 V	145 A

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