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STP7N105K5 - TO-220-3

STP7N105K5

Active
STMicroelectronics

N-CHANNEL 1050 V, 1.4 OHM TYP., 4 A MDMESH K5 POWER MOSFETS IN A TO-220 PACKAGE

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Search across all available documentation for this part.

DocumentsAN2344AN2842+15
STP7N105K5 - TO-220-3

STP7N105K5

Active
STMicroelectronics

N-CHANNEL 1050 V, 1.4 OHM TYP., 4 A MDMESH K5 POWER MOSFETS IN A TO-220 PACKAGE

Deep-Dive with AI

DocumentsAN2344AN2842+15

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP7N105K5
Current - Continuous Drain (Id) @ 25°C4 A
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs17 nC
Input Capacitance (Ciss) (Max) @ Vds380 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]110 W
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.84
50$ 2.25
100$ 1.93
500$ 1.71
1000$ 1.47
2000$ 1.38
5000$ 1.33

Description

General part information

STP7N105K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.