TK40E10N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0082 Ω@10V, TO-220, U-MOSⅧ-H
TK40E10N1,S1X
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 100 V, 0.0082 Ω@10V, TO-220, U-MOSⅧ-H
Description
General part information
TK40E10N1 Series
12V - 300V MOSFETs, N-ch MOSFET, 100 V, 0.0082 Ω@10V, TO-220, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TK40E10N1,S1X |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 90 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 49 nC, 49 nC |
| Input Capacitance (Ciss) (Max) | 3000 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Package Name | TO-220 |
| Power Dissipation (Max) | 126 W |
| Rds On (Max) | 8.2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
TK40E10N1,S1X | Datasheet
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
TK40E10N1 Data sheet/Japanese
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
MOSFET SPICE model grade
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
MOSFET Secondary Breakdown
Avalanche energy calculation
Resonant Circuits and Soft Switching
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Calculating the Temperature of Discrete Semiconductor Devices
MOSFET Self-Turn-On Phenomenon
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
RC Snubbers for Step-Down Converters
Maximum Ratings: Power MOSFET Application Notes
Simplified CFD Model Application Note
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Derating of the MOSFET Safe Operating Area
Selection Guide MOSFETs 2025 Rev1.0
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter