Specification	SIA477EDJT-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	50 nC
Input Capacitance (Ciss) (Max)	3050 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6 Single
Power Dissipation (Max)	19 W
Rds On (Max)	13 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1 V

SIA477 Series

Part	Power Dissipation (Max)	Rds On (Max)	Mounting Type	FET Type	Gate Charge (Max)	Package Name	Vgs (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Input Capacitance (Ciss) (Max)	Technology	Package / Case
Vishay Dale SIA477EDJT-T1-GE3	19 W	13 mOhm	Surface Mount	P-Channel	50 nC	PowerPAK® SC-70-6 Single	8 V	-55 °C	150 °C	12 A	12 V	4.5 V	1.8 V	1 V	3050 pF	MOSFET (Metal Oxide)	PowerPAK® SC-70-6
Vishay Dale SIA477EDJ-T1-GE3		14 mOhm	Surface Mount	P-Channel	87 nC	PowerPAK® SC-70-6		-55 °C	150 °C	12 A	12 V			1 V	2970 pF	MOSFET (Metal Oxide)	PowerPAK® SC-70-6

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