NGW75T65H3DFQ
ActiveIGBT WITH TRENCH CONSTRUCTION, FAST RECOVERY DIODE
NGW75T65H3DFQ
ActiveIGBT WITH TRENCH CONSTRUCTION, FAST RECOVERY DIODE
Description
General part information
NGW75T65H3DF Series
The NGW75T65H3DF is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW75T65H3DF is rated to 175 °C with optimized IGBT turn-off losses. This hard-switching 650 V, 75 A IGBT is optimized for high-voltage, high-frequency industrial power inverter applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | NGW75T65H3DFQ |
|---|---|
| Current - Collector (Ic) (Max) | 80 A |
| Current - Collector Pulsed (Icm) | 300 A |
| Gate Charge | 160 nC |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | TO-247-3 |
| Package Name | TO-247-3L |
| Power - Max | 600 W |
| Reverse Recovery Time (trr) | 165 ns |
| Switching Energy (Off) | 1.1 mJ |
| Switching Energy (On) | 2.9 mJ |
| Td (off) @ 25°C | 170 ns |
| Td (on) @ 25°C | 29 ns |
| Test Condition Current | 75 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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