AUIRFSL8403

Obsolete

Infineon Technologies

MOSFET N-CH 40V 123A TO262

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 123A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFSL8403

Current - Continuous Drain (Id) @ 25°C	123 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	93 nC
Input Capacitance (Ciss) (Max) @ Vds	3183 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	99 W
Rds On (Max) @ Id, Vgs [Max]	3.3 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	FET Type	Vgs (Max)	Grade	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds
Infineon Technologies AUIRFSL8403	N-Channel	20 V	Automotive	3.3 mOhm	123 A	40 V	3.9 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	Through Hole	93 nC	TO-262	10 V	AEC-Q101	99 W	-55 °C	175 ░C	3183 pF
Infineon Technologies AUIRFSL8403	N-Channel	20 V		3.3 mOhm	123 A	40 V	3.9 V	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	Through Hole	93 nC	TO-262	10 V		99 W	-55 °C	175 ░C	3183 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 123A (Tc) 99W (Tc) Through Hole TO-262

Technical documentation and resources