BAS2103WE6433HTMA1

Infineon Technologies

DIODE GP 200V 250MA SOD323-2

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Infineon Technologies

DIODE GP 200V 250MA SOD323-2

Technical Specifications

Parameters and characteristics for this part

Specification	BAS2103WE6433HTMA1

Capacitance @ Vr, F	5 pF
Current - Average Rectified (Io)	250 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	SOD-323, SC-76
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	1.25 V

Part	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Package / Case	Operating Temperature - Junction	Technology	Reverse Recovery Time (trr)	Speed	Current - Average Rectified (Io)
Infineon Technologies BAS2103WE6433HTMA1	1.25 V	200 V	Surface Mount	5 pF	100 nA	SC-76 SOD-323	150 °C	Standard	50 ns	200 mA 500 ns	250 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 200 V 250mA Surface Mount PG-SOD323-3D

Technical documentation and resources