Specification	SIUD406ED-T1-GE3

Current - Continuous Drain (Id) (Ta)	500 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	N-Channel
Gate Charge (Max)	0.6 nC
Input Capacitance (Ciss) (Max)	17 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 0806
Package Name	PowerPAK® 0806
Power Dissipation (Max)	1.25 W
Rds On (Max)	1.46 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max)	1.1 V

SIUD406 Series

Part	Input Capacitance (Ciss) (Max)	Rds On (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Package Name	Vgs (Max)	Package / Case	Gate Charge (Max)	Vgs(th) (Max)	FET Type	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Vishay Dale SIUD406ED-T1-GE3	17 pF	1.46 Ohm	Surface Mount	4.5 V	1.8 V	500 mA	-55 °C	150 °C	MOSFET (Metal Oxide)	PowerPAK® 0806	8 V	PowerPAK® 0806	0.6 nC	1.1 V	N-Channel	1.25 W	30 V

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