Description
General part information
IPLK60 Series
The 600 V CoolMOS™ PFD7 superjunction MOSFET (IPLK60R1K5PFD7) complements theCoolMOS™7 offering for consumer applications. The IPLK60R1K5PFD7 in a Thin-PAK 5x6 package features RDS(on)of 1,500 mOhm leading to low switching losses. This package is characterized by a very small footprint of 5x6 mm² and a very low profile with a height of 1 mm. Together with its benchmark low parasitics, these features lead to significantly smaller form factors and help to boost power density. The CoolMOS™ PFD7 products come with a fast body diode ensuring a robust device and in turn reduced bill-of-material (BOM) for the customer. This product family is tailored to ultrahigh power density as well as highest efficiency designs. The products primarily address ultrahigh density chargers, adapters and low-power motor drives. The 600 V CoolMOS™ PFD7 offers improved light- and full-load efficiency overCoolMOS™P7 and CE MOSFET technologies resulting in an increase in power density by 1.8 W/inch3.
Technical Specifications
Parameters and characteristics for this part
| Specification | IPLK60R1K5PFD7ATMA1 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 3.8 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 4.6 nC |
| Input Capacitance (Ciss) (Max) | 169 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerTDFN |
| Package Name | PG-TDSON-8-52 |
| Power Dissipation (Max) | 25 W |
| Rds On (Max) | 1.5 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4.5 V |
Pricing
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