Description
General part information
2ED28073 Series
600 Vhalf-bridgegate driver IC with integrated bootstrap diode with typical 0.02 A source and 0.08 A sink currents in DSO-8 package for driving MOSFETs including fast body diode CoolMOS PFD7 super junctionMOSFETsandIGBTs. The 2ED28073J06F is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a low di/dt output stage optimized to drive CoolMOS™ PFD7 in motor drive applications. The floating channel can be used to drive N-channel power MOSFETs or IGBTs in the high side configuration which operates up to 600 V.
Technical Specifications
Parameters and characteristics for this part
| Specification | 2ED28073J06FXUMA1 |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 80 mA |
| Current - Peak Output (Source) | 20 mA |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 225 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Input Type | CMOS, TTL |
| Logic Voltage - VIH | 2.2 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 125 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 1.5 µs |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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