Specification	SI4500BDY-T1-E3

Configuration	Common Drain, P-Channel, N
Current - Continuous Drain (Id) (Maximum)	3.8 A
Current - Continuous Drain (Id) (Typical)	6.6 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Max)	17 nC
Mounting Type	Surface Mount
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max	1.3 W
Rds On (Max)	20 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.5 V

SI4500 Series

Part	Drain to Source Voltage (Vdss)	Configuration	Package Length	Package Name	Package Width	Vgs(th) (Max)	Mounting Type	Gate Charge (Max)	FET Feature	Rds On (Max)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Technology	Power - Max
Vishay Dale SI4500BDY-T1-GE3	20 V	Common Drain N P-Channel	0.154 in	8-SOIC	3.9 mm	1.5 V	Surface Mount	17 nC	Logic Level Gate	20 mOhm	6.6 A	3.8 A	MOSFET (Metal Oxide)	1.3 W
Vishay Dale SI4500BDY-T1-E3	20 V	Common Drain N P-Channel	0.154 in	8-SOIC	3.9 mm	1.5 V	Surface Mount	17 nC	Logic Level Gate	20 mOhm	6.6 A	3.8 A	MOSFET (Metal Oxide)	1.3 W

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