Specification	SIZF914DT-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Ta)	23.5 A
Current - Continuous Drain (Id) (Ta) (2)	52 A
Current - Continuous Drain (Id) (Tc)	40 A
Current - Continuous Drain (Id) (Tc) (2)	60 A
Drain to Source Voltage (Vdss)	25 V
Gate Charge (Max)	98 nC, 21 nC
Input Capacitance (Ciss) (Max)	1050 pF, 4670 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerWDFN
Package Length	6 mm
Package Name	8-PowerPair®
Package Width	5 mm
Power - Max (Ta)	4 W, 3.4 W
Power - Max (Tc)	26.6 W, 60 W
Rds On (Max)	3.8 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.2 V, 2.4 V

SIZF914 Series

Part	Technology	Package Name	Package Width	Package Length	Input Capacitance (Ciss) (Max)	Rds On (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features	Power - Max (Ta)	Power - Max (Tc)	Package / Case	Mounting Type	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Ta) (2)	Current - Continuous Drain (Id) (Tc) (2)	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)
Vishay Dale SIZF914DT-T1-GE3	MOSFET (Metal Oxide)	8-PowerPair®	5 mm	6 mm	1050 pF 4670 pF	3.8 mOhm	21 nC 98 nC	2	N-Channel	Dual	3.4 W 4 W	26.6 W 60 W	8-PowerWDFN	Surface Mount	2.2 V 2.4 V	25 V	52 A	60 A	23.5 A	40 A	-55 °C	150 °C

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