2N1613A

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Microchip Technology

POWER BJT TO-5 ROHS COMPLIANT: YES

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2N1613A

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Microchip Technology

POWER BJT TO-5 ROHS COMPLIANT: YES

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Description Specifications Series Pricing CAD Documents

Description

General part information

2N1613 Series

This specification covers the performance requirements for NPN silicon, low-power, 2N718A, 2N1613 and 2N1613L transistors. Three levels of product assurance are provided (JAN, JANTX and JANTXV) for each device type as specified in MIL-PRF-19500/181.

Technical Specifications

Parameters and characteristics for this part

Specification	2N1613A

Current - Collector (Ic) (Max)	500 mA
Current - Collector Cutoff (Max)	0.01 µA
DC Current Gain (hFE) (Min)	40
Mounting Type	Through Hole
Operating Temperature (Max)	200 °C
Operating Temperature (Min)	-65 °C
Package / Case	TO-5-3 Metal Can, TO-205AA
Package Name	TO-5
Power - Max	800 mW
Transistor Type	NPN
Vce Saturation (Max)	1.5 V
Voltage - Collector Emitter Breakdown (Max)	30 V

2N1613 Series

NPN Silicon Low-Power 30V, 0.5A

Part	Vce Saturation (Max)	Current - Collector (Ic) (Max)	Transistor Type	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Current - Collector Cutoff (Max)	Power - Max	DC Current Gain (hFE) (Min)	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Qualification	Grade
Microchip Technology 2N1613A	1.5 V	500 mA	NPN	-65 °C	200 °C	TO-5	0.01 µA	800 mW	40	TO-205AA TO-5-3 Metal Can	30 V	Through Hole
Microchip Technology JAN2N1613	1.5 V	500 mA	NPN	-65 °C	200 °C	TO-39 (TO-205AD)	10 µA	800 mW	40	TO-205AD TO-39-3 Metal Can	30 V	Through Hole	181 MIL-PRF-19500	Military
Microchip Technology 2N1613L	1.5 V	500 mA	NPN	-65 °C	200 °C	TO-39	10 µA	800 mW	40	TO-205AD TO-39-3 Metal Can	30 V	Through Hole
Microchip Technology JANTXV2N1613L	1.5 V	500 mA	NPN	-65 °C	200 °C	TO-39	10 µA	800 mW	40	TO-205AD TO-39-3 Metal Can	30 V	Through Hole	181 MIL-PRF-19500	Military

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

2N718A 2N1613 2N1613L

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