CMS100N04H8-HF

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Comchip Technology

MOSFET N-CH 40V 100A DFN5X6

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Comchip Technology

MOSFET N-CH 40V 100A DFN5X6

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General part information

N-Channel 40 V 100A (Tc) 2W (Ta), 135W (Tc) Surface Mount DFN5x6 (PR-PAK)

Technical documentation and resources

Parameters and characteristics commom to parts in this series

Specification	CMS100N04H8-HF	CMS100 Series

Current - Continuous Drain (Id) @ 25°C	100 A	100 A
Drain to Source Voltage (Vdss)	40 V	30 - 40 V
FET Type	N-Channel	N-Channel
Gate Charge (Qg) (Max) @ Vgs	44.4 nC	44.4 nC
Gate Charge (Qg) (Max) @ Vgs	-	82 nC
Input Capacitance (Ciss) (Max) @ Vds	4940 pF	4222 - 4940 pF
Mounting Type	Surface Mount	Surface Mount
Operating Temperature [Max]	150 °C	150 °C
Operating Temperature [Min]	-55 °C	-55 °C
Package / Case	8-PowerTDFN	8-PowerTDFN
Power Dissipation (Max)	2 W, 135 W	2 - 135 W
Rds On (Max) @ Id, Vgs	2.8 mOhm	1.8 - 2.8 mOhm
Supplier Device Package	PR-PAK	PR-PAK
Supplier Device Package	DFN5x6	DFN5x6
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Vgs (Max)	20 V	20 V
Vgs(th) (Max) @ Id	2.5 V	2.5 V

MOSFET N-CH 30V 100A DFN5X6

Part	Supplier Device Package	Supplier Device Package	Technology	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Mounting Type	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs
Comchip Technology CMS100N03H8-HF	PR-PAK	DFN5x6	MOSFET (Metal Oxide)	N-Channel	20 V	-55 °C	150 °C	3.6 W, 83 W	100 A	82 nC	1.8 mOhm	Surface Mount	30 V	8-PowerTDFN	2.5 V	4222 pF
Comchip Technology CMS100N04H8-HF	PR-PAK	DFN5x6	MOSFET (Metal Oxide)	N-Channel	20 V	-55 °C	150 °C	2 W, 135 W	100 A		2.8 mOhm	Surface Mount	40 V	8-PowerTDFN	2.5 V	4940 pF	44.4 nC