IPD35N12S3L24ATMA1

Active

Infineon Technologies

IPD35N12S3L-24 IS AN AUTOMOTIVE MOSFET OFFERING 120V, N-CH, 24 MΩ MAX, DPAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Search across all available documentation for this part.

Active

Infineon Technologies

IPD35N12S3L-24 IS AN AUTOMOTIVE MOSFET OFFERING 120V, N-CH, 24 MΩ MAX, DPAK, OPTIMOS™-T, AEC Q101 QUALIFIED, 175°C OPERATING TEMP, ROHS COMPLIANT.

Technical Specifications

Parameters and characteristics for this part

Specification	IPD35N12S3L24ATMA1

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	120 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	71 W
Rds On (Max) @ Id, Vgs	24 mOhm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Supplier Device Package	Vgs (Max)	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology
Infineon Technologies IPD35N12S3L24ATMA1	PG-TO252-3	20 V	Surface Mount	24 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	71 W	4.5 V 10 V	N-Channel	-55 °C	175 ░C	39 nC	35 A	2.4 V	120 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 120 V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3

Technical documentation and resources