SPU18P06P

Obsolete

Infineon Technologies

MOSFET P-CH 60V 18.6A TO251-3

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Obsolete

Infineon Technologies

MOSFET P-CH 60V 18.6A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPU18P06P

Current - Continuous Drain (Id) @ 25°C	18.6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	860 pF
Mounting Type	Through Hole
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Rds On (Max) @ Id, Vgs	130 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies SPU18P06P	20 V	130 mOhm	MOSFET (Metal Oxide)	Through Hole	IPAK TO-251-3 Short Leads TO-251AA	60 V	PG-TO251-3	860 pF	10 V	P-Channel	18.6 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 18.6A (Tc) Through Hole PG-TO251-3

Technical documentation and resources

No documents available