F3L150R07W2E3B11BOMA1

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Infineon Technologies

THE F3L150R07W2E3_B11 IS A 650 V, 150 A 3-LEVEL IGBT MODULE

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Infineon Technologies

THE F3L150R07W2E3_B11 IS A 650 V, 150 A 3-LEVEL IGBT MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	F3L150R07W2E3B11BOMA1

Configuration	Single
Current - Collector (Ic) (Max) [Max]	150 A
Current - Collector Cutoff (Max) [Max]	1 mA
IGBT Type	Trench Field Stop
Input	Standard
Input Capacitance (Cies) @ Vce	9.3 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Package / Case	Module
Power - Max [Max]	335 W
Supplier Device Package	Module
Vce(on) (Max) @ Vge, Ic	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Vce(on) (Max) @ Vge, Ic	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	Input Capacitance (Cies) @ Vce	Input	Mounting Type	Package / Case	NTC Thermistor	Configuration	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	IGBT Type	Voltage - Collector Emitter Breakdown (Max) [Max]
Infineon Technologies F3L150R07W2E3B11BOMA1	1.9 V	650 V	1 mA	335 W	9.3 nF	Standard	Chassis Mount	Module		Single	150 A	Module	Trench Field Stop
Infineon Technologies F3L150R12W2H3B11BPSA1	1.75 V		1 mA	500 W	8.7 nF	Standard	Chassis Mount	Module		Three Phase Inverter	75 A	Module		1200 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 72.70

General part information

EasyPACK™ 2B650 V, 150 A 3-level phase legIGBT modulewith TRENCHSTOP™ IGBT3, Emitter Controlled 3 diode, NTC andPressFIT Contact Technology.

Technical documentation and resources

No documents available