MBRS30H45CT MNG

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 45V 30A TO263AB

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Taiwan Semiconductor Corporation

DIODE ARR SCHOTT 45V 30A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	MBRS30H45CT MNG

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	45 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Supplier Device Package	Diode Configuration	Technology	Current - Average Rectified (Io) (per Diode)	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Package / Case	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation MBRS30H45CT MNG	TO-263AB (D2PAK)	1 Pair Common Cathode	Schottky	30 A	45 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	200 mA 500 ns	175 ░C	-55 C	200 µA	900 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 45 V 30A Surface Mount TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Technical documentation and resources

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