IXTV230N085T

Obsolete

IXYS

MOSFET N-CH 85V 230A PLUS220

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 85V 230A PLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXTV230N085T

Current - Continuous Drain (Id) @ 25°C	230 A
Drain to Source Voltage (Vdss)	85 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	187 nC
Input Capacitance (Ciss) (Max) @ Vds	9900 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3, Short Tab
Power Dissipation (Max)	550 W
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	PLUS220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Supplier Device Package	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case
IXYS IXTV230N085T	187 nC	-55 °C	175 ░C	85 V	4.4 mOhm	20 V	Through Hole	9900 pF	10 V	N-Channel	PLUS220	4 V	550 W	230 A	MOSFET (Metal Oxide)	TO-220-3 Short Tab

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 85 V 230A (Tc) 550W (Tc) Through Hole PLUS220

Technical documentation and resources

No documents available