AOT600A70L

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 700V 8.5A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT600A70L

Current - Continuous Drain (Id) @ 25°C	8.5 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	15.5 nC
Input Capacitance (Ciss) (Max) @ Vds	870 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	104 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Supplier Device Package	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]
Alpha & Omega Semiconductor Inc. AOT600A70FL	900 pF	700 V	N-Channel	600 mOhm	TO-220	104 W	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	14.5 nC	TO-220-3	8.5 A	4 V	20 V	10 V
Alpha & Omega Semiconductor Inc. AOT600A60L		600 V	N-Channel	600 mOhm	TO-220		-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	11.5 nC	TO-220-3	8 A	3.5 V	20 V	10 V	608 pF	27.5 W
Alpha & Omega Semiconductor Inc. AOT600A70L		700 V	N-Channel	600 mOhm	TO-220	104 W	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	15.5 nC	TO-220-3	8.5 A	3.5 V	20 V	10 V	870 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1000	$ 0.79

General part information

N-Channel 700 V 8.5A (Tc) 104W (Tc) Through Hole TO-220

Technical documentation and resources