TUAS8M

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 8A SMPC4.6U

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Taiwan Semiconductor Corporation

DIODE GEN PURP 1KV 8A SMPC4.6U

Technical Specifications

Parameters and characteristics for this part

Specification	TUAS8M

Capacitance @ Vr, F	54 pF
Current - Average Rectified (Io)	8 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	3-PowerDFN, TO-277
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SMPC4.6U
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F	Technology	Mounting Type	Supplier Device Package	Speed	Speed
Taiwan Semiconductor Corporation TUAS8M	5 µA	1.1 V	8 A	150 °C	-55 °C	3-PowerDFN TO-277	1000 V	54 pF	Standard	Surface Mount	SMPC4.6U	Standard Recovery >500ns	200 mA
Taiwan Semiconductor Corporation TUAS8K	5 µA	1.1 V	8 A	150 °C	-55 °C	3-PowerDFN TO-277	800 V	54 pF	Standard	Surface Mount	SMPC4.6U	Standard Recovery >500ns	200 mA
Taiwan Semiconductor Corporation TUAS8D	5 µA	1.1 V	8 A	150 °C	-55 °C	3-PowerDFN TO-277	200 V	62 pF	Standard	Surface Mount	SMPC4.6U	Standard Recovery >500ns	200 mA
Taiwan Semiconductor Corporation TUAS8J	5 µA	1.1 V	8 A	150 °C	-55 °C	3-PowerDFN TO-277	600 V	62 pF	Standard	Surface Mount	SMPC4.6U	Standard Recovery >500ns	200 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 8A Surface Mount SMPC4.6U

Technical documentation and resources