APT5010LLLG

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Microchip Technology

MOSFET MODULES MOSFET MOS7 500 V 10 OHM TO-264

APT5010LLLG

Active

Microchip Technology

MOSFET MODULES MOSFET MOS7 500 V 10 OHM TO-264

Description Specifications Series Pricing CAD Documents

Description

General part information

MOSFET-500V Series

Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channel

switch-mode power transistors with lower EMI characteristics and lower cost

compared to previous generation devices. These MOSFETs / FREDFETs have been

Technical Specifications

Parameters and characteristics for this part

Specification	APT5010LLLG

Current - Continuous Drain (Id) (Tc)	46 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	95 nC
Input Capacitance (Ciss) (Max)	4360 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-264-3, TO-264AA
Package Name	TO-264 (L), TO-264 [L]
Power Dissipation (Max)	520 W
Rds On (Max)	100 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

MOSFET-500V Series

Part	Package Name	Power Dissipation (Max)	Package / Case	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Rds On (Max)	Gate Charge (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)
Microchip Technology APT5010LLLG	TO-264 (L) TO-264 [L]	520 W	TO-264-3 TO-264AA	-55 °C	150 °C	N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	100 mOhm	95 nC	5 V	46 A	10 V	4360 pF	30 V
Microchip Technology APT5010B2VRG	T-MAX™ [B2]		TO-247-3 Variant			N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	100 mOhm	470 nC	4 V	47 A		8900 pF 8900 pF
Microchip Technology APT5018SLLG/TR	D3PAK	300 W	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	-55 °C	150 °C	N-Channel	500 V	MOSFET (Metal Oxide)	Surface Mount	180 mOhm	58 nC 58 nC	5 V	27 A	10 V	2596 pF	30 V
Microchip Technology APT5015BVRG	TO-247 [B]		TO-247-3			N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	150 mOhm	300 nC	4 V	32 A		5280 pF
Microchip Technology APT50M50JVR	ISOTOP®		miniBLOC SOT-227-4			N-Channel	500 V	MOSFET (Metal Oxide)	Chassis Mount	50 mOhm 50 mOhm	1000 nC	4 V	77 A		19600 pF
Microchip Technology APT5024SLLG	D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			N-Channel	500 V	MOSFET (Metal Oxide)	Surface Mount	240 mOhm	43 nC	5 V	22 A		1900 pF
Microchip Technology APT5018SLLG	D3PAK		D3PAK (2 Leads + Tab) TO-268-3 TO-268AA			N-Channel	500 V	MOSFET (Metal Oxide)	Surface Mount	180 mOhm	58 nC 58 nC	5 V	27 A		2596 pF
Microchip Technology APT50M65LLLG	TO-264 (L) TO-264 [L]	694 W	TO-264-3 TO-264AA	-55 °C	150 °C	N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	65 mOhm	141 nC	5 V	67 A	10 V	7010 pF	30 V
Microchip Technology APT50M38JLL	ISOTOP®	694 W	miniBLOC SOT-227-4	-55 °C	150 °C	N-Channel	500 V	MOSFET (Metal Oxide)	Chassis Mount	38 mOhm	270 nC	5 V	88 A	10 V	12000 pF	30 V
Microchip Technology APT5017BVRG	TO-247 [B]		TO-247-3			N-Channel	500 V	MOSFET (Metal Oxide)	Through Hole	170 mOhm	300 nC	4 V	30 A		5280 pF