2SC4604,T6F(M

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A TO92MOD

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 50V 3A TO92MOD

Technical Specifications

Parameters and characteristics for this part

Specification	2SC4604,T6F(M

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-92-3 Long Body, TO-226-3
Power - Max [Max]	900 mW
Supplier Device Package	TO-92MOD
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Package / Case	Vce Saturation (Max) @ Ib, Ic [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Operating Temperature	Supplier Device Package	Transistor Type	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]
Toshiba Semiconductor and Storage 2SC4604,T6F(M	TO-226-3 TO-92-3 Long Body	500 mV	100 nA	50 V	Through Hole	150 °C	TO-92MOD	NPN	3 A	100 MHz	120	900 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 50 V 3 A 100MHz 900 mW Through Hole TO-92MOD

Technical documentation and resources