IXFN80N50

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LITTELFUSE

DISCMSFT NCH HIPERFETS-STD SOT-227B(MINI/ TUBE

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IXFN80N50

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LITTELFUSE

DISCMSFT NCH HIPERFETS-STD SOT-227B(MINI/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFN80 Series

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Advantages: Higher efficiency High power density Easy to mount Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN80N50

Current - Continuous Drain (Id) (Tc)	66 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max)	9890 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-227-4, miniBLOC
Package Name	SOT-227B
Power Dissipation (Max)	700 W
Rds On (Max)	55 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4.5 V

IXFN80 Series

DiscMSFT NCh HiPerFET-QCls SOT-227B/mini

Part	Input Capacitance (Ciss) (Max)	Technology	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Vgs (Max)	Rds On (Max)	Power Dissipation (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package Name	FET Type	Gate Charge (Max)
LITTELFUSE IXFN80N50	9890 pF	MOSFET (Metal Oxide)	66 A	500 V	miniBLOC SOT-227-4	Chassis Mount	20 V	55 mOhm	700 W	-55 °C	150 °C	4.5 V	10 V	SOT-227B	N-Channel
LITTELFUSE IXFN80N50Q2	12800 pF	MOSFET (Metal Oxide)	72 A	500 V	miniBLOC SOT-227-4	Chassis Mount	30 V	60 mOhm	890 W	-55 °C	150 °C	4.5 V	10 V	SOT-227B	N-Channel	250 nC
LITTELFUSE IXFN80N50	9890 pF	MOSFET (Metal Oxide)	66 A	500 V	miniBLOC SOT-227-4	Chassis Mount	20 V	55 mOhm	700 W	-55 °C	150 °C	4.5 V	10 V	SOT-227B	N-Channel
LITTELFUSE IXFN80N50P	12700 pF	MOSFET (Metal Oxide)	66 A	500 V	miniBLOC SOT-227-4	Chassis Mount	30 V	65 mOhm	700 W	-55 °C	150 °C	5 V	10 V	SOT-227B	N-Channel	195 nC
LITTELFUSE IXFN80N50Q3	10000 pF	MOSFET (Metal Oxide)	63 A	500 V	miniBLOC SOT-227-4	Chassis Mount	30 V	65 mOhm	780 W	-55 °C	150 °C	6.5 V	10 V	SOT-227B	N-Channel	200 nC
LITTELFUSE IXFN80N48	9890 pF	MOSFET (Metal Oxide)	80 A	480 V	miniBLOC SOT-227-4	Chassis Mount	20 V	45 mOhm	700 W	-55 °C	150 °C	4 V	10 V	SOT-227B	N-Channel
LITTELFUSE IXFN80N60P3	13100 pF	MOSFET (Metal Oxide)	66 A	600 V	miniBLOC SOT-227-4	Chassis Mount	30 V	70 mOhm	960 W	-55 °C	150 °C	5 V	10 V	SOT-227B	N-Channel	190 nC
LITTELFUSE IXFN80N60P3	13100 pF	MOSFET (Metal Oxide)	66 A	600 V	miniBLOC SOT-227-4	Chassis Mount	30 V	70 mOhm	960 W	-55 °C	150 °C	5 V	10 V	SOT-227B	N-Channel	190 nC
LITTELFUSE IXFN80N50P	12700 pF	MOSFET (Metal Oxide)	66 A	500 V	miniBLOC SOT-227-4	Chassis Mount	30 V	65 mOhm	700 W	-55 °C	150 °C	5 V	10 V	SOT-227B	N-Channel	195 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

IXFN80N50 | Datasheet

Handling and Mounting Littelfuse miniBLOC - SOT227B

UR_QQQX2_E153432_20180829

UR_QQQX2_E72873_20171208

Datasheet