Specification	DS1230AB-120IND

Access Time	120 ns
Memory Depth	32 K
Memory Format	NVSRAM
Memory Interface (Type)	Parallel
Memory Size	32 kB
Memory Type	Non-Volatile
Memory Width	8 bit
Mounting Type	Through Hole
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package Length	0.6 in
Package Name	28-EDIP, 28-DIP Module
Technology	NVSRAM (Non-Volatile SRAM)
Voltage - Supply (Maximum)	5.25 V
Voltage - Supply (Minimum)	4.75 V
Write Cycle Time - Page	120 ns
Write Cycle Time - Word	120 ns

DS1230AB Series

Part	Memory Format	Memory Type	Memory Depth	Memory Width	Voltage - Supply (Maximum)	Voltage - Supply (Minimum)	Mounting Type	Package Length	Package Name	Memory Interface (Type)	Technology	Access Time	Write Cycle Time - Page	Write Cycle Time - Word	Operating Temperature (Max)	Operating Temperature (Min)	Memory Size	Package / Case
Analog Devices Inc./Maxim Integrated DS1230AB-120IND+	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	120 ns	120 ns	120 ns	85 °C	-40 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230ABP-100+	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Surface Mount		34-PowerCap Module	Parallel	NVSRAM (Non-Volatile SRAM)	100 ns	100 ns	100 ns	70 °C	0 °C	32 kB	34-PowerCap™ Module
Analog Devices Inc./Maxim Integrated DS1230AB-200IND	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	200 ns	200 ns	200 ns	85 °C	-40 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230AB-200	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	200 ns	200 ns	200 ns	70 °C	0 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230ABP-100	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Surface Mount		34-PowerCap Module	Parallel	NVSRAM (Non-Volatile SRAM)	100 ns	100 ns	100 ns	70 °C	0 °C	32 kB	34-PowerCap™ Module
Analog Devices Inc./Maxim Integrated DS1230AB-100	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	100 ns	100 ns	100 ns	70 °C	0 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230AB-70IND+	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	70 ns	70 ns	70 ns	85 °C	-40 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230AB-120IND	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	120 ns	120 ns	120 ns	85 °C	-40 °C	32 kB
Analog Devices Inc./Maxim Integrated DS1230ABP-70IND+	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Surface Mount		34-PowerCap Module	Parallel	NVSRAM (Non-Volatile SRAM)	70 ns	70 ns	70 ns	85 °C	-40 °C	32 kB	34-PowerCap™ Module
Analog Devices Inc./Maxim Integrated DS1230AB-85+	NVSRAM	Non-Volatile	32 K	8 bit	5.25 V	4.75 V	Through Hole	0.6 in	28-DIP Module 28-EDIP	Parallel	NVSRAM (Non-Volatile SRAM)	85 ns	85 ns	85 ns	70 °C	0 °C	32 kB

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DS1230AB-120IND | Datasheet