BCW61AE6327HTSA1

Obsolete

Infineon Technologies

TRANS PNP 32V 0.1A SOT23

Search across all available documentation for this part.

Obsolete

Infineon Technologies

TRANS PNP 32V 0.1A SOT23

Technical Specifications

Parameters and characteristics for this part

Specification	BCW61AE6327HTSA1

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	20 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	120
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	330 mW
Supplier Device Package	PG-SOT23
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	550 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Operating Temperature	Power - Max [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max)	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce	Supplier Device Package	Package / Case
Infineon Technologies BCW61AE6327HTSA1	150 °C	330 mW	250 MHz	20 nA	100 mA	Surface Mount	550 mV	32 V	PNP	120	PG-SOT23	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 32 V 100 mA 250MHz 330 mW Surface Mount PG-SOT23

Technical documentation and resources