Specification	MSCSM70VR1M19C1AG

Channel Count	2
Configuration	N Channel
Configuration - Features	Phase Leg
Current - Continuous Drain (Id) (Tc)	124 A
Drain to Source Voltage (Vdss)	700 V
Gate Charge (Max)	215 nC, 215 nC
Input Capacitance (Ciss) (Max)	4500 pF
Mounting Type	Chassis Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	Module
Power - Max (Tc)	365 W
Rds On (Max)	19 mOhm
Technology	Silicon Carbide (SiC)
Vgs(th) (Max)	2.4 V

MSCSM70 Series

700V, 7.5 mOhm, SP6P, Triple Vienna Rectifier mSiC™ MOSFET Module

Part	Power - Max (Tc)	Operating Temperature (Max)	Operating Temperature (Min)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Drain to Source Voltage (Vdss)	Package / Case	Vgs(th) (Max)	Rds On (Max)	Mounting Type	Channel Count	Configuration - Features	Configuration	Technology	Input Capacitance (Ciss) (Max)	Package Name
Microchip Technology MSCSM70AM025T6AG	1882 W	175 °C	-40 °C	1290 nC	689 A	700 V	Module	2.4 V	3.2 mOhm	Chassis Mount	2	Phase Leg	N Channel	Silicon Carbide (SiC)	27000 pF
Microchip Technology MSCSM70HM05AG	966 W	175 °C	-40 °C	645 nC	349 A	700 V	Module	2.4 V	6.4 mOhm	Chassis Mount	4	Full Bridge	N-Channel	Silicon Carbide (SiC)	13500 pF
Microchip Technology MSCSM70AM07T3AG	988 W	175 °C	-40 °C	645 nC	353 A	700 V	Module	2.4 V	6.4 mOhm	Chassis Mount	2	Phase Leg	N Channel	Silicon Carbide (SiC)	13500 pF
Microchip Technology MSCSM70VM19C3AG	365 W	175 °C	-40 °C	215 nC 215 nC	124 A	700 V	Module	2.4 V	19 mOhm	Chassis Mount	2	Phase Leg	N Channel	Silicon Carbide (SiC)	4500 pF	SP3F
Microchip Technology MSCSM70TAM19T3AG	365 W	175 °C	-40 °C	215 nC 215 nC	124 A	700 V	Module	2.4 V	19 mOhm	Chassis Mount	6	Phase Leg	N-Channel	Silicon Carbide (SiC)	4500 pF
Microchip Technology MSCSM70AM025D3AG	1882 W	175 °C	-40 °C	1290 nC	689 A	700 V	Module	2.4 V	3.2 mOhm	Chassis Mount	2	Phase Leg	N Channel	Silicon Carbide (SiC)	27000 pF
Microchip Technology MSCSM70VR1M19C1AG	365 W	175 °C	-40 °C	215 nC 215 nC	124 A	700 V	Module	2.4 V	19 mOhm	Chassis Mount	2	Phase Leg	N Channel	Silicon Carbide (SiC)	4500 pF
Microchip Technology MSCSM70TLM07CAG	966 W	175 °C	-40 °C	645 nC	349 A	700 V	Module	2.4 V	6.4 mOhm	Chassis Mount	4	Three Level Inverter	N-Channel	Silicon Carbide (SiC)	13500 pF	SP6C
Microchip Technology MSCSM70HM038CAG
Microchip Technology MSCSM70TLM19C3AG	365 W	175 °C	-40 °C	215 nC 215 nC	124 A	700 V	Module	2.4 V	19 mOhm	Chassis Mount	4	Three Level Inverter	N-Channel	Silicon Carbide (SiC)	4500 pF	SP3F

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MSCSM70VR1M19C1AG | Datasheet

MSCSM70VR1M19C1AG Vienna Rectifier SiC MOSFET Power Module

Mounting Instructions for SP1F and SP3F Power Modules

Driving mSiC™ MOSFETs