IS41C16256C-35TLI

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ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT PARALLEL 40TSOP

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ISSI, Integrated Silicon Solution Inc

IC DRAM 4MBIT PARALLEL 40TSOP

Technical Specifications

Parameters and characteristics commom to parts in this series

IC DRAM 4MBIT PARALLEL 40TSOP

Part	Memory Organization	Memory Interface	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Memory Type	Package / Case	Package / Case	Package / Case	Technology	Memory Format	Mounting Type	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Access Time
ISSI, Integrated Silicon Solution Inc IS41C16256C-35TLI	256 K	Parallel	4.5 V	5.5 V	512 kb	Volatile	10.16 mm, 40 Leads	44-TSOP	10.16 mm	DRAM - EDO	DRAM	Surface Mount	40-TSOP	85 °C	-40 °C	18 ns
ISSI, Integrated Silicon Solution Inc IS41C16256C-35TLI-TR	256 K	Parallel	4.5 V	5.5 V	512 kb	Volatile	10.16 mm, 40 Leads	44-TSOP	10.16 mm	DRAM - EDO	DRAM	Surface Mount	40-TSOP	85 °C	-40 °C	18 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

DRAM - EDO Memory IC 4Mbit Parallel 18 ns 40-TSOP

Technical documentation and resources