RE1C002UNTCL
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 20 V, 200 MA, 0.8 OHM, SOT-416FL, SURFACE MOUNT
RE1C002UNTCL
ActiveRohm Semiconductor
POWER MOSFET, N CHANNEL, 20 V, 200 MA, 0.8 OHM, SOT-416FL, SURFACE MOUNT
Description
General part information
RE1C002UN Series
MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market.
Technical Specifications
Parameters and characteristics for this part
| Specification | RE1C002UNTCL |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 200 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On) | 1.2 V |
| Drive Voltage (Min Rds On) | 2.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) | 25 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-490, SC-89 |
| Package Name | EMT3F (SOT-416FL) |
| Power Dissipation (Max) | 150 mW |
| Rds On (Max) | 1.2 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
RE1C002UNTCL | Datasheet
Anti-Whisker formation - Transistors
ESD Data
What Is Thermal Design
Basics of Thermal Resistance and Heat Dissipation
About Flammability of Materials
Inner Structure
MOSFET Gate Resistor Setting for Motor Driving
Precautions When Measuring the Rear of the Package with a Thermocouple
List of Transistor Package Thermal Resistance
Temperature derating method for Safe Operating Area (SOA)
How to Use LTspice® Models: Tips for Improving Convergence
How to Create Symbols for PSpice Models
Explanation for Marking
Two-Resistor Model for Thermal Simulation
How to Use LTspice® Models
Measurement Method and Usage of Thermal Resistance RthJC
Notes for Temperature Measurement Using Thermocouples
Part Explanation
PCB Layout Thermal Design Guide
What is a Thermal Model? (Transistor)
Reliability Test Result
Taping Information
Certificate of not containing SVHC under REACH Regulation
Importance of Probe Calibration When Measuring Power: Deskew
Method for Monitoring Switching Waveform
Notes for Calculating Power Consumption:Static Operation
Condition of Soldering / Land Pattern Reference
Types and Features of Transistors
Moisture Sensitivity Level - Transistors
Impedance Characteristics of Bypass Capacitor
Calculation of Power Dissipation in Switching Circuit
Compliance of the RoHS directive
About Export Regulations
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Package Dimensions
MOSFET Gate Drive Current Setting for Motor Driving
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)