Zenode.ai Logo
STPSC10H065G2-TR - TN4050HP-12G2YTR

STPSC10H065G2-TR

Active
STMicroelectronics

650 V, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Deep-Dive with AI

Search across all available documentation for this part.

STPSC10H065G2-TR - TN4050HP-12G2YTR

STPSC10H065G2-TR

Active
STMicroelectronics

650 V, 10 A HIGH SURGE SILICON CARBIDE POWER SCHOTTKY DIODE

Deep-Dive with AI

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.47
10$ 2.91
100$ 2.36
500$ 2.10
Digi-Reel® 1$ 3.47
10$ 2.91
100$ 2.36
500$ 2.10
Tape & Reel (TR) 1000$ 1.79
2000$ 1.69
5000$ 1.62

Description

General part information

STPSC10H065G2 Series

This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.

The STPSC10H065G2 will boost performances in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.