IXFQ60N60X

Obsolete

IXYS

MOSFET N-CH 600V 60A TO3P

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 600V 60A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	IXFQ60N60X

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	143 nC
Input Capacitance (Ciss) (Max) @ Vds	5800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	890 W
Rds On (Max) @ Id, Vgs	55 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Technology	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
IXYS IXFQ60N60X	MOSFET (Metal Oxide)	30 V	890 W	5800 pF	600 V	SC-65-3 TO-3P-3	10 V	-55 °C	150 °C	Through Hole	4.5 V	N-Channel	TO-3P	55 mOhm	143 nC	60 A
IXYS IXFQ60N25X3	MOSFET (Metal Oxide)	20 V		3610 pF	250 V	SC-65-3 TO-3P-3	10 V	-55 °C	150 °C	Through Hole	4.5 V	N-Channel	TO-3P			60 A	320 W	23 mOhm	50 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 600 V 60A (Tc) 890W (Tc) Through Hole TO-3P

Technical documentation and resources

No documents available