IXTX8N150L

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IXYS

MOSFET N-CH 1500V 8A PLUS247-3

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IXYS

MOSFET N-CH 1500V 8A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXTX8N150L

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	1500 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	250 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	8000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3 Variant
Power Dissipation (Max) [Max]	700 W
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id [Max]	8 V

Part	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	FET Type	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Package / Case	Vgs(th) (Max) @ Id [Max]	Drain to Source Voltage (Vdss)	Technology	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTX8N150L	250 nC	PLUS247™-3	N-Channel	700 W	8 A	30 V	8000 pF	Through Hole	TO-247-3 Variant	8 V	1500 V	MOSFET (Metal Oxide)	-55 °C	150 °C

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General part information

N-Channel 1500 V 8A (Tc) 700W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

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