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IDDD08G65C6XTMA1 - P/PG-HDSOP-10-1

IDDD08G65C6XTMA1

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Infineon Technologies

COOLSIC™ G6 SILICON CARBIDE SCHOTTKY DIODE 12.2 NC DDPAK (PG-HDSOP-10)

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IDDD08G65C6XTMA1 - P/PG-HDSOP-10-1

IDDD08G65C6XTMA1

Active
Infineon Technologies

COOLSIC™ G6 SILICON CARBIDE SCHOTTKY DIODE 12.2 NC DDPAK (PG-HDSOP-10)

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIDDD08G65C6XTMA1
Capacitance @ Vr, F401 pF
Current - Average Rectified (Io)24 A
Current - Reverse Leakage @ Vr27 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / Case10-PowerSOP Module
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device PackagePG-HDSOP-10-1
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.21
10$ 1.86
100$ 1.50
500$ 1.47
Digi-Reel® 1$ 2.21
10$ 1.86
100$ 1.50
500$ 1.47
Tape & Reel (TR) 1700$ 1.47

Description

General part information

IDDD08 Series

Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technologyCoolSiC™ Schottky diode 650 V G6is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.

Documents

Technical documentation and resources