IPW60R018CFD7XKSA1

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Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 18 MOHM; FAST RECOVERY DIODE

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IPW60R018CFD7XKSA1

Active

Infineon Technologies

COOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 18 MOHM; FAST RECOVERY DIODE

Deep-Dive with AI

DocumentsDatasheet Technical Data Sheet EN

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPW60R018CFD7XKSA1

Current - Continuous Drain (Id) @ 25°C	101 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	251 nC
Input Capacitance (Ciss) (Max) @ Vds	9901 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	416 W
Rds On (Max) @ Id, Vgs	18 mOhm
Supplier Device Package	PG-TO247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

IPW60R018 Series

Part	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]
Infineon Technologies IPW60R018CFD7XKSA1	TO-247-3	9901 pF	416 W	PG-TO247-3	-55 °C	150 °C	Through Hole	N-Channel	20 V	600 V	10 V	MOSFET (Metal Oxide)	101 A	4.5 V	18 mOhm	251 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 18.10
		5	$ 14.60
		10	$ 14.10
Digikey	Tube	1	$ 19.11
		30	$ 11.98
		120	$ 10.99
Newark	Each	1	$ 22.42
		10	$ 20.20
		25	$ 15.92
		50	$ 15.62
		100	$ 15.32
		480	$ 15.01
		720	$ 14.71

Description

General part information

IPW60R018 Series

The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.