Technical Specifications
Parameters and characteristics for this part
| Specification | BU508AW |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 200 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 10 |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 1 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 700 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
BU508AF Series
The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.
Documents
Technical documentation and resources